Capacitive Behavior of Single Gallium Oxide Nanobelt

In this research, monocrystalline gallium oxide (Ga(2)O(3)) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga(2)O(3) nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteri...

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Detalles Bibliográficos
Autores principales: Cai, Haitao, Liu, Hang, Zhu, Huichao, Shao, Pai, Hou, Changmin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455499/
https://www.ncbi.nlm.nih.gov/pubmed/28793506
http://dx.doi.org/10.3390/ma8085244
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author Cai, Haitao
Liu, Hang
Zhu, Huichao
Shao, Pai
Hou, Changmin
author_facet Cai, Haitao
Liu, Hang
Zhu, Huichao
Shao, Pai
Hou, Changmin
author_sort Cai, Haitao
collection PubMed
description In this research, monocrystalline gallium oxide (Ga(2)O(3)) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga(2)O(3) nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga(2)O(3) nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t characteristics show the capacitive behavior of the Ga(2)O(3) nanobelt, indicating the existence of capacitive elements in the Pt/Ga(2)O(3)/Pt structure.
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spelling pubmed-54554992017-07-28 Capacitive Behavior of Single Gallium Oxide Nanobelt Cai, Haitao Liu, Hang Zhu, Huichao Shao, Pai Hou, Changmin Materials (Basel) Article In this research, monocrystalline gallium oxide (Ga(2)O(3)) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga(2)O(3) nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga(2)O(3) nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t characteristics show the capacitive behavior of the Ga(2)O(3) nanobelt, indicating the existence of capacitive elements in the Pt/Ga(2)O(3)/Pt structure. MDPI 2015-08-17 /pmc/articles/PMC5455499/ /pubmed/28793506 http://dx.doi.org/10.3390/ma8085244 Text en © 2015 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Cai, Haitao
Liu, Hang
Zhu, Huichao
Shao, Pai
Hou, Changmin
Capacitive Behavior of Single Gallium Oxide Nanobelt
title Capacitive Behavior of Single Gallium Oxide Nanobelt
title_full Capacitive Behavior of Single Gallium Oxide Nanobelt
title_fullStr Capacitive Behavior of Single Gallium Oxide Nanobelt
title_full_unstemmed Capacitive Behavior of Single Gallium Oxide Nanobelt
title_short Capacitive Behavior of Single Gallium Oxide Nanobelt
title_sort capacitive behavior of single gallium oxide nanobelt
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455499/
https://www.ncbi.nlm.nih.gov/pubmed/28793506
http://dx.doi.org/10.3390/ma8085244
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AT shaopai capacitivebehaviorofsinglegalliumoxidenanobelt
AT houchangmin capacitivebehaviorofsinglegalliumoxidenanobelt

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