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Cubic C(3)N: A New Superhard Phase of Carbon-Rich Nitride

Using the particle swarm optimization technique, we proposed a cubic superhard phase of C(3)N (c-C(3)N) with an estimated Vicker’s hardness of 65 GPa, which is more energetically favorable than the recently proposed o-C(3)N. The c-C(3)N is the most stable phase in a pressure range of 6.5–15.4 GPa. A...

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Detalles Bibliográficos
Autores principales: Wei, Qun, Zhang, Quan, Yan, Haiyan, Zhang, Meiguang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456634/
https://www.ncbi.nlm.nih.gov/pubmed/28773960
http://dx.doi.org/10.3390/ma9100840
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author Wei, Qun
Zhang, Quan
Yan, Haiyan
Zhang, Meiguang
author_facet Wei, Qun
Zhang, Quan
Yan, Haiyan
Zhang, Meiguang
author_sort Wei, Qun
collection PubMed
description Using the particle swarm optimization technique, we proposed a cubic superhard phase of C(3)N (c-C(3)N) with an estimated Vicker’s hardness of 65 GPa, which is more energetically favorable than the recently proposed o-C(3)N. The c-C(3)N is the most stable phase in a pressure range of 6.5–15.4 GPa. Above 15.4 GPa, the most energetic favorable high pressure phase R3m-C(3)N is uncovered. Phonon dispersion and elastic constant calculations confirm the dynamical and mechanical stability of c-C(3)N and R3m-C(3)N at ambient pressure. The electronic structure calculations indicate that both c-C(3)N and R3m-C(3)N are indirect semiconductor.
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spelling pubmed-54566342017-07-28 Cubic C(3)N: A New Superhard Phase of Carbon-Rich Nitride Wei, Qun Zhang, Quan Yan, Haiyan Zhang, Meiguang Materials (Basel) Article Using the particle swarm optimization technique, we proposed a cubic superhard phase of C(3)N (c-C(3)N) with an estimated Vicker’s hardness of 65 GPa, which is more energetically favorable than the recently proposed o-C(3)N. The c-C(3)N is the most stable phase in a pressure range of 6.5–15.4 GPa. Above 15.4 GPa, the most energetic favorable high pressure phase R3m-C(3)N is uncovered. Phonon dispersion and elastic constant calculations confirm the dynamical and mechanical stability of c-C(3)N and R3m-C(3)N at ambient pressure. The electronic structure calculations indicate that both c-C(3)N and R3m-C(3)N are indirect semiconductor. MDPI 2016-10-17 /pmc/articles/PMC5456634/ /pubmed/28773960 http://dx.doi.org/10.3390/ma9100840 Text en © 2016 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wei, Qun
Zhang, Quan
Yan, Haiyan
Zhang, Meiguang
Cubic C(3)N: A New Superhard Phase of Carbon-Rich Nitride
title Cubic C(3)N: A New Superhard Phase of Carbon-Rich Nitride
title_full Cubic C(3)N: A New Superhard Phase of Carbon-Rich Nitride
title_fullStr Cubic C(3)N: A New Superhard Phase of Carbon-Rich Nitride
title_full_unstemmed Cubic C(3)N: A New Superhard Phase of Carbon-Rich Nitride
title_short Cubic C(3)N: A New Superhard Phase of Carbon-Rich Nitride
title_sort cubic c(3)n: a new superhard phase of carbon-rich nitride
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456634/
https://www.ncbi.nlm.nih.gov/pubmed/28773960
http://dx.doi.org/10.3390/ma9100840
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