Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography

We report on Chemical Beam Epitaxy (CBE) growth of wavelength tunable InAs/GaAs quantum dots (QD) based superluminescent diode’s active layer suitable for Optical Coherence Tomography (OCT). The In-flush technique has been employed to fabricate QD with controllable heights, from 5 nm down to 2 nm, a...

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Detalles Bibliográficos
Autores principales: Ilahi, Bouraoui, Zribi, Jihene, Guillotte, Maxime, Arès, Richard, Aimez, Vincent, Morris, Denis
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456885/
https://www.ncbi.nlm.nih.gov/pubmed/28773633
http://dx.doi.org/10.3390/ma9070511

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456885/
https://www.ncbi.nlm.nih.gov/pubmed/28773633
http://dx.doi.org/10.3390/ma9070511

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