Cargando…

Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography

We report on Chemical Beam Epitaxy (CBE) growth of wavelength tunable InAs/GaAs quantum dots (QD) based superluminescent diode’s active layer suitable for Optical Coherence Tomography (OCT). The In-flush technique has been employed to fabricate QD with controllable heights, from 5 nm down to 2 nm, a...

Descripción completa

Detalles Bibliográficos
Autores principales:	Ilahi, Bouraoui, Zribi, Jihene, Guillotte, Maxime, Arès, Richard, Aimez, Vincent, Morris, Denis
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456885/ https://www.ncbi.nlm.nih.gov/pubmed/28773633 http://dx.doi.org/10.3390/ma9070511

Ejemplares similares

Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position
por: Souaf, Manel, et al.
Publicado: (2015)

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate
por: Azeza, Bilel, et al.
Publicado: (2015)

Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
por: Chen, Zi-Bin, et al.
Publicado: (2012)

Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
por: Bietti, Sergio, et al.
Publicado: (2015)

Electrically-Pumped Wavelength-Tunable GaAs Quantum Dots Interfaced with Rubidium Atoms
por: Huang, Huiying, et al.
Publicado: (2017)

Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
por: Golovynskyi, Sergii, et al.
Publicado: (2017)

Evolution of wetting layer in InAs/GaAs quantum dot system
por: Chen, YH, et al.
Publicado: (2006)

Quantitative strain analysis of InAs/GaAs quantum dot materials
por: Vullum, Per Erik, et al.
Publicado: (2017)

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer
por: Utrilla, Antonio D, et al.
Publicado: (2014)

Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate
por: Huang, Xiaoying, et al.
Publicado: (2021)

Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
por: Dai, Liping, et al.
Publicado: (2014)

Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation
por: Hussain, Sajid, et al.
Publicado: (2016)

Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
por: Maximov, Mikhail V, et al.
Publicado: (2014)

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
por: Benyahia, D., et al.
Publicado: (2018)

Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots
por: Kiravittaya, S, et al.
Publicado: (2006)

Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation
por: Hu, Xian, et al.
Publicado: (2020)

High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
por: Bietti, Sergio, et al.
Publicado: (2020)

Phonon Transport in GaAs and InAs Twinning Superlattices
por: López-Güell, Kim, et al.
Publicado: (2022)

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
por: Strom, NW, et al.
Publicado: (2007)

The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs
por: Tommila, Juha, et al.
Publicado: (2012)

Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems
por: Dai, Liping, et al.
Publicado: (2015)

Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure
por: Zhou, Xiaolong, et al.
Publicado: (2011)

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B
por: Davydok, Anton, et al.
Publicado: (2013)

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
por: Liu, Yao, et al.
Publicado: (2015)

Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy
por: Wang, L, et al.
Publicado: (2006)

Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth
por: Helfrich, Mathieu, et al.
Publicado: (2011)

Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice
por: Sobolev, Mikhail, et al.
Publicado: (2012)

Spatial regularity of InAs-GaAs quantum dots: quantifying the dependence of lateral ordering on growth rate
por: Konishi, T., et al.
Publicado: (2017)

InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods
por: Zhukov, Alexey E., et al.
Publicado: (2020)

Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
por: Dey, Arka B., et al.
Publicado: (2018)

The X-ray response of epitaxial GaAs
por: Owens, A, et al.
Publicado: (1998)

Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators
por: Lee, Shuh Ying, et al.
Publicado: (2013)

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
por: Su, Xiang-Bin, et al.
Publicado: (2018)

InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition
por: Li, Senlin, et al.
Publicado: (2013)

Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
por: Liang, BL, et al.
Publicado: (2007)

Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
por: Zhang, Hongyi, et al.
Publicado: (2012)

Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces
por: Milekhin, Alexander, et al.
Publicado: (2012)

Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode
por: Li, Shulun, et al.
Publicado: (2020)

Angle-dependent magnetotransport in GaAs/InAs core/shell nanowires
por: Haas, Fabian, et al.
Publicado: (2016)

Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform
por: Kwan, D. C. M., et al.
Publicado: (2022)

Cannot write session to /tmp/vufind_sessions/sess_et12nnomvthq6biue1rr06j3l2