Compliance-Free ZrO(2)/ZrO(2 − x)/ZrO(2) Resistive Memory with Controllable Interfacial Multistate Switching Behaviour

A controllable transformation from interfacial to filamentary switching mode is presented on a ZrO(2)/ZrO(2 − x)/ZrO(2) tri-layer resistive memory. The two switching modes are investigated with possible switching and transformation mechanisms proposed. Resistivity modulation of the ZrO(2 − x) layer...

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Detalles Bibliográficos
Autores principales: Huang, Ruomeng, Yan, Xingzhao, Ye, Sheng, Kashtiban, Reza, Beanland, Richard, Morgan, Katrina A., Charlton, Martin D. B., de Groot, C. H. (Kees)
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5457368/
https://www.ncbi.nlm.nih.gov/pubmed/28582965
http://dx.doi.org/10.1186/s11671-017-2155-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5457368/
https://www.ncbi.nlm.nih.gov/pubmed/28582965
http://dx.doi.org/10.1186/s11671-017-2155-0

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