A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing

Carrier recombination behavior in c-plane GaN-based laser diodes (LDs) is numerically investigated by using the commercial software LASTIP. It is found that efficiency droop phenomenon does exist in GaN-based LDs before lasing, which is confirmed by experimental results. However, the current density...

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Detalles Bibliográficos
Autores principales: Feng, Mei-Xin, Sun, Qian, Liu, Jian-Ping, Li, Zeng-Cheng, Zhou, Yu, Gao, Hong-Wei, Zhang, Shu-Ming, Yang, Hui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5459086/
https://www.ncbi.nlm.nih.gov/pubmed/28772842
http://dx.doi.org/10.3390/ma10050482

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5459086/
https://www.ncbi.nlm.nih.gov/pubmed/28772842
http://dx.doi.org/10.3390/ma10050482

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