Carrier Compensation Induced by Thermal Annealing in Al-Doped ZnO Films

This study investigated carrier compensation induced by thermal annealing in sputtered ZnO:Al (Al(2)O(3): 0.25, 0.5, 1.0, and 2.0 wt %) films. The films were post-annealed in a N(2) atmosphere at low (1 × 10(−23) atm) and high (1 × 10(−4) atm) oxygen partial pressures (P(O2)). In ZnO:Al films with l...

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Detalles Bibliográficos
Autores principales: Koida, Takashi, Kaneko, Tetsuya, Shibata, Hajime
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5459124/
https://www.ncbi.nlm.nih.gov/pubmed/28772501
http://dx.doi.org/10.3390/ma10020141

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5459124/
https://www.ncbi.nlm.nih.gov/pubmed/28772501
http://dx.doi.org/10.3390/ma10020141

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