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Carrier Compensation Induced by Thermal Annealing in Al-Doped ZnO Films
This study investigated carrier compensation induced by thermal annealing in sputtered ZnO:Al (Al(2)O(3): 0.25, 0.5, 1.0, and 2.0 wt %) films. The films were post-annealed in a N(2) atmosphere at low (1 × 10(−23) atm) and high (1 × 10(−4) atm) oxygen partial pressures (P(O2)). In ZnO:Al films with l...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5459124/ https://www.ncbi.nlm.nih.gov/pubmed/28772501 http://dx.doi.org/10.3390/ma10020141 |