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Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes
This paper reviews the formation of nanoscale V-shaped pits on GaN-based light emitting diodes (LEDs) grown by the metal organic chemical vapor deposition (MOCVD) system and studies the effect of V-shaped pits on quantum efficiency. Since V-pits could provide potential barriers around threading disl...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5459134/ https://www.ncbi.nlm.nih.gov/pubmed/28772476 http://dx.doi.org/10.3390/ma10020113 |