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Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes

This paper reviews the formation of nanoscale V-shaped pits on GaN-based light emitting diodes (LEDs) grown by the metal organic chemical vapor deposition (MOCVD) system and studies the effect of V-shaped pits on quantum efficiency. Since V-pits could provide potential barriers around threading disl...

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Detalles Bibliográficos
Autores principales:	Chen, Shuo-Wei, Li, Heng, Chang, Chia-Jui, Lu, Tien-Chang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2017
Materias:	Review
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5459134/ https://www.ncbi.nlm.nih.gov/pubmed/28772476 http://dx.doi.org/10.3390/ma10020113

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