Synthesis and Evaluation of Thick Films of Electrochemically Deposited Bi(2)Te(3) and Sb(2)Te(3) Thermoelectric Materials

This paper presents the results of the synthesis and evaluation of thick thermoelectric films that may be used for such applications as thermoelectric power generators. Two types of electrochemical deposition methods, constant and pulsed deposition with improved techniques for both N-type bismuth te...

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Detalles Bibliográficos
Autores principales: Trung, Nguyen Huu, Sakamoto, Kei, Toan, Nguyen Van, Ono, Takahito
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5459149/
https://www.ncbi.nlm.nih.gov/pubmed/28772511
http://dx.doi.org/10.3390/ma10020154
Descripción
Sumario:This paper presents the results of the synthesis and evaluation of thick thermoelectric films that may be used for such applications as thermoelectric power generators. Two types of electrochemical deposition methods, constant and pulsed deposition with improved techniques for both N-type bismuth telluride (Bi(2)Te(3)) and P-type antimony telluride (Sb(2)Te(3)), are performed and compared. As a result, highly oriented Bi(2)Te(3) and Sb(2)Te(3) thick films with a bulk-like structure are successfully synthesized with high Seebeck coefficients and low electrical resistivities. Six hundred-micrometer-thick Bi(2)Te(3) and 500-µm-thick Sb(2)Te(3) films are obtained. The Seebeck coefficients for the Bi(2)Te(3) and Sb(2)Te(3) films are −150 ± 20 and 170 ± 20 µV/K, respectively. Additionally, the electrical resistivity for the Bi(2)Te(3) is 15 ± 5 µΩm and is 25 ± 5 µΩm for the Sb(2)Te(3). The power factors of each thermoelectric material can reach 15 × 10(−4) W/mK(2) for Bi(2)Te(3) and 11.2 × 10(−4) W/mK(2) for Sb(2)Te(3).

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