Three-dimensional crossbar arrays of self-rectifying Si/SiO(2)/Si memristors

Memristors are promising building blocks for the next-generation memory and neuromorphic computing systems. Most memristors use materials that are incompatible with the silicon dominant complementary metal-oxide-semiconductor technology, and require external selectors in order for large memristor ar...

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Detalles Bibliográficos
Autores principales: Li, Can, Han, Lili, Jiang, Hao, Jang, Moon-Hyung, Lin, Peng, Wu, Qing, Barnell, Mark, Yang, J. Joshua, Xin, Huolin L., Xia, Qiangfei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5465358/
https://www.ncbi.nlm.nih.gov/pubmed/28580928
http://dx.doi.org/10.1038/ncomms15666

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5465358/
https://www.ncbi.nlm.nih.gov/pubmed/28580928
http://dx.doi.org/10.1038/ncomms15666

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