Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates

Facile, effective and reliable etching technique for the formation of uniform silicon (Si) nanowire arrays were realized through the incorporation of back substrates with metal-assisted chemical etching (MaCE). In comparison with conventional MaCE process, a dramatic increase of etching rates upon M...

Descripción completa

Detalles Bibliográficos
Autores principales: Chen, Chia-Yun, Wei, Ta-Cheng, Lin, Cheng-Ting, Li, Jheng-Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5466673/
https://www.ncbi.nlm.nih.gov/pubmed/28600489
http://dx.doi.org/10.1038/s41598-017-03498-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5466673/
https://www.ncbi.nlm.nih.gov/pubmed/28600489
http://dx.doi.org/10.1038/s41598-017-03498-y

Ejemplares similares