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Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates
Facile, effective and reliable etching technique for the formation of uniform silicon (Si) nanowire arrays were realized through the incorporation of back substrates with metal-assisted chemical etching (MaCE). In comparison with conventional MaCE process, a dramatic increase of etching rates upon M...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5466673/ https://www.ncbi.nlm.nih.gov/pubmed/28600489 http://dx.doi.org/10.1038/s41598-017-03498-y |