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Electrical resistance of individual defects at a topological insulator surface
Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. H...
Autores principales: | , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5472778/ https://www.ncbi.nlm.nih.gov/pubmed/28604672 http://dx.doi.org/10.1038/ncomms15704 |
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author | Lüpke, Felix Eschbach, Markus Heider, Tristan Lanius, Martin Schüffelgen, Peter Rosenbach, Daniel von den Driesch, Nils Cherepanov, Vasily Mussler, Gregor Plucinski, Lukasz Grützmacher, Detlev Schneider, Claus M. Voigtländer, Bert |
author_facet | Lüpke, Felix Eschbach, Markus Heider, Tristan Lanius, Martin Schüffelgen, Peter Rosenbach, Daniel von den Driesch, Nils Cherepanov, Vasily Mussler, Gregor Plucinski, Lukasz Grützmacher, Detlev Schneider, Claus M. Voigtländer, Bert |
author_sort | Lüpke, Felix |
collection | PubMed |
description | Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defects at the surface of a (Bi(0.53)Sb(0.47))(2)Te(3) topological insulator thin film. We find the largest localized voltage drop to be located at domain boundaries in the topological insulator film, with a resistivity about four times higher than that of a step edge. Furthermore, we resolve resistivity dipoles located around nanoscale voids in the sample surface. The influence of such defects on the resistance of the topological surface state is analysed by means of a resistor network model. The effect resulting from the voids is found to be small compared with the other defects. |
format | Online Article Text |
id | pubmed-5472778 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-54727782017-06-28 Electrical resistance of individual defects at a topological insulator surface Lüpke, Felix Eschbach, Markus Heider, Tristan Lanius, Martin Schüffelgen, Peter Rosenbach, Daniel von den Driesch, Nils Cherepanov, Vasily Mussler, Gregor Plucinski, Lukasz Grützmacher, Detlev Schneider, Claus M. Voigtländer, Bert Nat Commun Article Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defects at the surface of a (Bi(0.53)Sb(0.47))(2)Te(3) topological insulator thin film. We find the largest localized voltage drop to be located at domain boundaries in the topological insulator film, with a resistivity about four times higher than that of a step edge. Furthermore, we resolve resistivity dipoles located around nanoscale voids in the sample surface. The influence of such defects on the resistance of the topological surface state is analysed by means of a resistor network model. The effect resulting from the voids is found to be small compared with the other defects. Nature Publishing Group 2017-06-12 /pmc/articles/PMC5472778/ /pubmed/28604672 http://dx.doi.org/10.1038/ncomms15704 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Lüpke, Felix Eschbach, Markus Heider, Tristan Lanius, Martin Schüffelgen, Peter Rosenbach, Daniel von den Driesch, Nils Cherepanov, Vasily Mussler, Gregor Plucinski, Lukasz Grützmacher, Detlev Schneider, Claus M. Voigtländer, Bert Electrical resistance of individual defects at a topological insulator surface |
title | Electrical resistance of individual defects at a topological insulator surface |
title_full | Electrical resistance of individual defects at a topological insulator surface |
title_fullStr | Electrical resistance of individual defects at a topological insulator surface |
title_full_unstemmed | Electrical resistance of individual defects at a topological insulator surface |
title_short | Electrical resistance of individual defects at a topological insulator surface |
title_sort | electrical resistance of individual defects at a topological insulator surface |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5472778/ https://www.ncbi.nlm.nih.gov/pubmed/28604672 http://dx.doi.org/10.1038/ncomms15704 |
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