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Ambient effects on electrical characteristics of CVD-grown monolayer MoS(2) field-effect transistors
Monolayer materials are sensitive to their environment because all of the atoms are at their surface. We investigate how exposure to the environment affects the electrical properties of CVD-grown monolayer MoS(2) by monitoring electrical parameters of MoS(2) field-effect transistors as their environ...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5481332/ https://www.ncbi.nlm.nih.gov/pubmed/28642472 http://dx.doi.org/10.1038/s41598-017-04350-z |
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author | Ahn, Jae-Hyuk Parkin, William M. Naylor, Carl H. Johnson, A. T. Charlie Drndić, Marija |
author_facet | Ahn, Jae-Hyuk Parkin, William M. Naylor, Carl H. Johnson, A. T. Charlie Drndić, Marija |
author_sort | Ahn, Jae-Hyuk |
collection | PubMed |
description | Monolayer materials are sensitive to their environment because all of the atoms are at their surface. We investigate how exposure to the environment affects the electrical properties of CVD-grown monolayer MoS(2) by monitoring electrical parameters of MoS(2) field-effect transistors as their environment is changed from atmosphere to high vacuum. The mobility increases and contact resistance decreases simultaneously as either the pressure is reduced or the sample is annealed in vacuum. We see a previously unobserved, non-monotonic change in threshold voltage with decreasing pressure. This result could be explained by charge transfer on the MoS(2) channel and Schottky contact formation due to adsorbates at the interface between the gold contacts and MoS(2). Additionally, from our electrical measurements it is plausible to infer that at room temperature and pressure water and oxygen molecules adsorbed on the surface act as interface traps and scattering centers with a density of several 10(12) cm(−2) eV(−1), degrading the electrical properties of monolayer MoS(2). |
format | Online Article Text |
id | pubmed-5481332 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-54813322017-06-26 Ambient effects on electrical characteristics of CVD-grown monolayer MoS(2) field-effect transistors Ahn, Jae-Hyuk Parkin, William M. Naylor, Carl H. Johnson, A. T. Charlie Drndić, Marija Sci Rep Article Monolayer materials are sensitive to their environment because all of the atoms are at their surface. We investigate how exposure to the environment affects the electrical properties of CVD-grown monolayer MoS(2) by monitoring electrical parameters of MoS(2) field-effect transistors as their environment is changed from atmosphere to high vacuum. The mobility increases and contact resistance decreases simultaneously as either the pressure is reduced or the sample is annealed in vacuum. We see a previously unobserved, non-monotonic change in threshold voltage with decreasing pressure. This result could be explained by charge transfer on the MoS(2) channel and Schottky contact formation due to adsorbates at the interface between the gold contacts and MoS(2). Additionally, from our electrical measurements it is plausible to infer that at room temperature and pressure water and oxygen molecules adsorbed on the surface act as interface traps and scattering centers with a density of several 10(12) cm(−2) eV(−1), degrading the electrical properties of monolayer MoS(2). Nature Publishing Group UK 2017-06-22 /pmc/articles/PMC5481332/ /pubmed/28642472 http://dx.doi.org/10.1038/s41598-017-04350-z Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Ahn, Jae-Hyuk Parkin, William M. Naylor, Carl H. Johnson, A. T. Charlie Drndić, Marija Ambient effects on electrical characteristics of CVD-grown monolayer MoS(2) field-effect transistors |
title | Ambient effects on electrical characteristics of CVD-grown monolayer MoS(2) field-effect transistors |
title_full | Ambient effects on electrical characteristics of CVD-grown monolayer MoS(2) field-effect transistors |
title_fullStr | Ambient effects on electrical characteristics of CVD-grown monolayer MoS(2) field-effect transistors |
title_full_unstemmed | Ambient effects on electrical characteristics of CVD-grown monolayer MoS(2) field-effect transistors |
title_short | Ambient effects on electrical characteristics of CVD-grown monolayer MoS(2) field-effect transistors |
title_sort | ambient effects on electrical characteristics of cvd-grown monolayer mos(2) field-effect transistors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5481332/ https://www.ncbi.nlm.nih.gov/pubmed/28642472 http://dx.doi.org/10.1038/s41598-017-04350-z |
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