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Self-assembled Cubic Boron Nitride Nanodots
One of the low-dimensional Boron Nitride (BN) forms, namely, cubic-BN (c-BN) nanodots (NDs), offers a variety of novel opportunities in battery, biology, deep ultraviolet light emitting diodes, sensors, filters, and other optoelectronic applications. To date, the attempts towards producing c-BN NDs...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5481407/ https://www.ncbi.nlm.nih.gov/pubmed/28642622 http://dx.doi.org/10.1038/s41598-017-04297-1 |
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author | Khanaki, Alireza Xu, Zhongguang Tian, Hao Zheng, Renjing Zuo, Zheng Zheng, Jian-Guo Liu, Jianlin |
author_facet | Khanaki, Alireza Xu, Zhongguang Tian, Hao Zheng, Renjing Zuo, Zheng Zheng, Jian-Guo Liu, Jianlin |
author_sort | Khanaki, Alireza |
collection | PubMed |
description | One of the low-dimensional Boron Nitride (BN) forms, namely, cubic-BN (c-BN) nanodots (NDs), offers a variety of novel opportunities in battery, biology, deep ultraviolet light emitting diodes, sensors, filters, and other optoelectronic applications. To date, the attempts towards producing c-BN NDs were mainly performed under extreme high-temperature/high-pressure conditions and resulted in c-BN NDs with micrometer sizes, mixture of different BN phases, and containing process-related impurities/contaminants. To enhance device performance for those applications by taking advantage of size effect, pure, sub-100 nm c-BN NDs are necessary. In this paper, we report self-assembled growth of c-BN NDs on cobalt and nickel substrates by plasma-assisted molecular beam epitaxy. It is found that the nucleation, formation, and morphological properties of c-BN NDs can be closely correlated with the nature of substrate including catalysis effect, lattice-mismatch-induced strain, and roughness, and growth conditions, in particular, growth time and growth temperature. The mean lateral size of c-BN NDs on cobalt scales from 175 nm to 77 nm with the growth time. The growth mechanism of c-BN NDs on metal substrates is concluded to be Volmer-Weber (VW) mode. A simplified two-dimensional numerical modeling shows that the elastic strain energy plays a key role in determining the total formation energy of c-BN NDs on metals. |
format | Online Article Text |
id | pubmed-5481407 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-54814072017-06-26 Self-assembled Cubic Boron Nitride Nanodots Khanaki, Alireza Xu, Zhongguang Tian, Hao Zheng, Renjing Zuo, Zheng Zheng, Jian-Guo Liu, Jianlin Sci Rep Article One of the low-dimensional Boron Nitride (BN) forms, namely, cubic-BN (c-BN) nanodots (NDs), offers a variety of novel opportunities in battery, biology, deep ultraviolet light emitting diodes, sensors, filters, and other optoelectronic applications. To date, the attempts towards producing c-BN NDs were mainly performed under extreme high-temperature/high-pressure conditions and resulted in c-BN NDs with micrometer sizes, mixture of different BN phases, and containing process-related impurities/contaminants. To enhance device performance for those applications by taking advantage of size effect, pure, sub-100 nm c-BN NDs are necessary. In this paper, we report self-assembled growth of c-BN NDs on cobalt and nickel substrates by plasma-assisted molecular beam epitaxy. It is found that the nucleation, formation, and morphological properties of c-BN NDs can be closely correlated with the nature of substrate including catalysis effect, lattice-mismatch-induced strain, and roughness, and growth conditions, in particular, growth time and growth temperature. The mean lateral size of c-BN NDs on cobalt scales from 175 nm to 77 nm with the growth time. The growth mechanism of c-BN NDs on metal substrates is concluded to be Volmer-Weber (VW) mode. A simplified two-dimensional numerical modeling shows that the elastic strain energy plays a key role in determining the total formation energy of c-BN NDs on metals. Nature Publishing Group UK 2017-06-22 /pmc/articles/PMC5481407/ /pubmed/28642622 http://dx.doi.org/10.1038/s41598-017-04297-1 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Khanaki, Alireza Xu, Zhongguang Tian, Hao Zheng, Renjing Zuo, Zheng Zheng, Jian-Guo Liu, Jianlin Self-assembled Cubic Boron Nitride Nanodots |
title | Self-assembled Cubic Boron Nitride Nanodots |
title_full | Self-assembled Cubic Boron Nitride Nanodots |
title_fullStr | Self-assembled Cubic Boron Nitride Nanodots |
title_full_unstemmed | Self-assembled Cubic Boron Nitride Nanodots |
title_short | Self-assembled Cubic Boron Nitride Nanodots |
title_sort | self-assembled cubic boron nitride nanodots |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5481407/ https://www.ncbi.nlm.nih.gov/pubmed/28642622 http://dx.doi.org/10.1038/s41598-017-04297-1 |
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