Optical and Electrical Characteristics of Silicon Nanowires Prepared by Electroless Etching

Silicon nanowires (SiNWs) were fabricated by the electroless etching of an n-type Si (100) wafer in HF/AgNO(3). Vertically aligned and high-density SiNWs are formed on the Si substrates. Various shapes of SiNWs are observed, including round, rectangular, and triangular. The recorded maximum reflecta...

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Detalles Bibliográficos
Autores principales: Hutagalung, Sabar D., Fadhali, Mohammed M., Areshi, Raed A., Tan, Fui D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5483226/
https://www.ncbi.nlm.nih.gov/pubmed/28651386
http://dx.doi.org/10.1186/s11671-017-2197-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5483226/
https://www.ncbi.nlm.nih.gov/pubmed/28651386
http://dx.doi.org/10.1186/s11671-017-2197-3

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