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Optical and Electrical Characteristics of Silicon Nanowires Prepared by Electroless Etching
Silicon nanowires (SiNWs) were fabricated by the electroless etching of an n-type Si (100) wafer in HF/AgNO(3). Vertically aligned and high-density SiNWs are formed on the Si substrates. Various shapes of SiNWs are observed, including round, rectangular, and triangular. The recorded maximum reflecta...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5483226/ https://www.ncbi.nlm.nih.gov/pubmed/28651386 http://dx.doi.org/10.1186/s11671-017-2197-3 |