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Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

We report the first self-catalyzed growth of high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates. To achieve the growth of vertical InAs/GaSb heterostructure nanowires, the two-step flow rates of the trimethylgallium (TMGa) and trime...

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Detalles Bibliográficos
Autores principales:	Ji, Xianghai, Yang, Xiaoguang, Yang, Tao
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2017
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5484658/ https://www.ncbi.nlm.nih.gov/pubmed/28655220 http://dx.doi.org/10.1186/s11671-017-2207-5

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