Cargando…
Submicron-scale broadband polarization beam splitter using CMOS-compatible materials
We propose a polarization beam splitter (PBS) with a footprint of only 600 × 790 nm(2) operating at a wavelength of λ = 1550 nm, which is the smallest PBS ever demonstrated. This device uses CMOS-compatible materials, namely, silicon and silica. The present PBS comprises two Si waveguides with diffe...
Autores principales: | , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5495812/ https://www.ncbi.nlm.nih.gov/pubmed/28674440 http://dx.doi.org/10.1038/s41598-017-05019-3 |
_version_ | 1783247855034564608 |
---|---|
author | Lai, Ming-Sheng Huang, Chia-Chien |
author_facet | Lai, Ming-Sheng Huang, Chia-Chien |
author_sort | Lai, Ming-Sheng |
collection | PubMed |
description | We propose a polarization beam splitter (PBS) with a footprint of only 600 × 790 nm(2) operating at a wavelength of λ = 1550 nm, which is the smallest PBS ever demonstrated. This device uses CMOS-compatible materials, namely, silicon and silica. The present PBS comprises two Si waveguides with different geometrical aspect ratios adjoined side-by-side, which separates the transverse-electric (TE) and transverse-magnetic (TM) modes without relying on an additional coupling region. The designed PBS achieves a polarization extinction ratio of approximately 25 dB for both modes and insertion losses of approximately 0.87 and 1.09 dB for the TE and TM polarizations, respectively. Over a wide bandwidth of 150 nm (from λ = 1475–1625 nm), a high polarization extinction ratio (greater than 20 dB) and a low inversion loss (lower than 1.3 dB) can be obtained. The proposed PBS allows for geometrical errors of ±15 nm while maintaining a polarization extinction ratio of >20 dB and inversion losses of >1.1 and 1.3 dB for the TE and TM modes, respectively. With the submicron footprint, the reported PBS may be able to be used in high-density photonic integrated circuits and nanophotonic devices. |
format | Online Article Text |
id | pubmed-5495812 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-54958122017-07-07 Submicron-scale broadband polarization beam splitter using CMOS-compatible materials Lai, Ming-Sheng Huang, Chia-Chien Sci Rep Article We propose a polarization beam splitter (PBS) with a footprint of only 600 × 790 nm(2) operating at a wavelength of λ = 1550 nm, which is the smallest PBS ever demonstrated. This device uses CMOS-compatible materials, namely, silicon and silica. The present PBS comprises two Si waveguides with different geometrical aspect ratios adjoined side-by-side, which separates the transverse-electric (TE) and transverse-magnetic (TM) modes without relying on an additional coupling region. The designed PBS achieves a polarization extinction ratio of approximately 25 dB for both modes and insertion losses of approximately 0.87 and 1.09 dB for the TE and TM polarizations, respectively. Over a wide bandwidth of 150 nm (from λ = 1475–1625 nm), a high polarization extinction ratio (greater than 20 dB) and a low inversion loss (lower than 1.3 dB) can be obtained. The proposed PBS allows for geometrical errors of ±15 nm while maintaining a polarization extinction ratio of >20 dB and inversion losses of >1.1 and 1.3 dB for the TE and TM modes, respectively. With the submicron footprint, the reported PBS may be able to be used in high-density photonic integrated circuits and nanophotonic devices. Nature Publishing Group UK 2017-07-03 /pmc/articles/PMC5495812/ /pubmed/28674440 http://dx.doi.org/10.1038/s41598-017-05019-3 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Lai, Ming-Sheng Huang, Chia-Chien Submicron-scale broadband polarization beam splitter using CMOS-compatible materials |
title | Submicron-scale broadband polarization beam splitter using CMOS-compatible materials |
title_full | Submicron-scale broadband polarization beam splitter using CMOS-compatible materials |
title_fullStr | Submicron-scale broadband polarization beam splitter using CMOS-compatible materials |
title_full_unstemmed | Submicron-scale broadband polarization beam splitter using CMOS-compatible materials |
title_short | Submicron-scale broadband polarization beam splitter using CMOS-compatible materials |
title_sort | submicron-scale broadband polarization beam splitter using cmos-compatible materials |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5495812/ https://www.ncbi.nlm.nih.gov/pubmed/28674440 http://dx.doi.org/10.1038/s41598-017-05019-3 |
work_keys_str_mv | AT laimingsheng submicronscalebroadbandpolarizationbeamsplitterusingcmoscompatiblematerials AT huangchiachien submicronscalebroadbandpolarizationbeamsplitterusingcmoscompatiblematerials |