Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities

Simple solvent vapor annealing over QLS film-based OFET devices fabricated from (Pc)Eu[Pc(ONh)(8)]Eu[Pc(ONh)(8)] led to a high and balanced ambipolar performance that has never been observed for small molecule single-component-based solution processed devices, with mobilities of 1.71 and 1.25 cm(2)...

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Detalles Bibliográficos
Autores principales: Kong, Xia, Zhang, Xia, Gao, Dameng, Qi, Dongdong, Chen, Yanli, Jiang, Jianzhuang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Royal Society of Chemistry 2015
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5495994/
https://www.ncbi.nlm.nih.gov/pubmed/28706646
http://dx.doi.org/10.1039/c4sc03492a
Descripción
Sumario:Simple solvent vapor annealing over QLS film-based OFET devices fabricated from (Pc)Eu[Pc(ONh)(8)]Eu[Pc(ONh)(8)] led to a high and balanced ambipolar performance that has never been observed for small molecule single-component-based solution processed devices, with mobilities of 1.71 and 1.25 cm(2) V(–1) s(–1) for holes and electrons, respectively, under ambient conditions.

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