Cargando…

Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities

Simple solvent vapor annealing over QLS film-based OFET devices fabricated from (Pc)Eu[Pc(ONh)(8)]Eu[Pc(ONh)(8)] led to a high and balanced ambipolar performance that has never been observed for small molecule single-component-based solution processed devices, with mobilities of 1.71 and 1.25 cm(2)...

Descripción completa

Detalles Bibliográficos
Autores principales: Kong, Xia, Zhang, Xia, Gao, Dameng, Qi, Dongdong, Chen, Yanli, Jiang, Jianzhuang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Royal Society of Chemistry 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5495994/
https://www.ncbi.nlm.nih.gov/pubmed/28706646
http://dx.doi.org/10.1039/c4sc03492a
_version_ 1783247883287396352
author Kong, Xia
Zhang, Xia
Gao, Dameng
Qi, Dongdong
Chen, Yanli
Jiang, Jianzhuang
author_facet Kong, Xia
Zhang, Xia
Gao, Dameng
Qi, Dongdong
Chen, Yanli
Jiang, Jianzhuang
author_sort Kong, Xia
collection PubMed
description Simple solvent vapor annealing over QLS film-based OFET devices fabricated from (Pc)Eu[Pc(ONh)(8)]Eu[Pc(ONh)(8)] led to a high and balanced ambipolar performance that has never been observed for small molecule single-component-based solution processed devices, with mobilities of 1.71 and 1.25 cm(2) V(–1) s(–1) for holes and electrons, respectively, under ambient conditions.
format Online
Article
Text
id pubmed-5495994
institution National Center for Biotechnology Information
language English
publishDate 2015
publisher Royal Society of Chemistry
record_format MEDLINE/PubMed
spelling pubmed-54959942017-07-13 Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities Kong, Xia Zhang, Xia Gao, Dameng Qi, Dongdong Chen, Yanli Jiang, Jianzhuang Chem Sci Chemistry Simple solvent vapor annealing over QLS film-based OFET devices fabricated from (Pc)Eu[Pc(ONh)(8)]Eu[Pc(ONh)(8)] led to a high and balanced ambipolar performance that has never been observed for small molecule single-component-based solution processed devices, with mobilities of 1.71 and 1.25 cm(2) V(–1) s(–1) for holes and electrons, respectively, under ambient conditions. Royal Society of Chemistry 2015-03-01 2014-12-10 /pmc/articles/PMC5495994/ /pubmed/28706646 http://dx.doi.org/10.1039/c4sc03492a Text en This journal is © The Royal Society of Chemistry 2015 http://creativecommons.org/licenses/by/3.0/ This is an Open Access article distributed under the terms of the Creative Commons Attribution 3.0 Unported License (http://creativecommons.org/licenses/by/3.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Chemistry
Kong, Xia
Zhang, Xia
Gao, Dameng
Qi, Dongdong
Chen, Yanli
Jiang, Jianzhuang
Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities
title Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities
title_full Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities
title_fullStr Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities
title_full_unstemmed Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities
title_short Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities
title_sort air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5495994/
https://www.ncbi.nlm.nih.gov/pubmed/28706646
http://dx.doi.org/10.1039/c4sc03492a
work_keys_str_mv AT kongxia airstableambipolarfieldeffecttransistorbasedonasolutionprocessedoctanaphthoxysubstitutedtrisphthalocyaninatoeuropiumsemiconductorwithhighandbalancedcarriermobilities
AT zhangxia airstableambipolarfieldeffecttransistorbasedonasolutionprocessedoctanaphthoxysubstitutedtrisphthalocyaninatoeuropiumsemiconductorwithhighandbalancedcarriermobilities
AT gaodameng airstableambipolarfieldeffecttransistorbasedonasolutionprocessedoctanaphthoxysubstitutedtrisphthalocyaninatoeuropiumsemiconductorwithhighandbalancedcarriermobilities
AT qidongdong airstableambipolarfieldeffecttransistorbasedonasolutionprocessedoctanaphthoxysubstitutedtrisphthalocyaninatoeuropiumsemiconductorwithhighandbalancedcarriermobilities
AT chenyanli airstableambipolarfieldeffecttransistorbasedonasolutionprocessedoctanaphthoxysubstitutedtrisphthalocyaninatoeuropiumsemiconductorwithhighandbalancedcarriermobilities
AT jiangjianzhuang airstableambipolarfieldeffecttransistorbasedonasolutionprocessedoctanaphthoxysubstitutedtrisphthalocyaninatoeuropiumsemiconductorwithhighandbalancedcarriermobilities