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Au-Capped GaAs Nanopillar Arrays Fabricated by Metal-Assisted Chemical Etching

GaAs nanopillar arrays were successfully fabricated by metal-assisted chemical etching using Au nanodot arrays. The nanodot arrays were formed on substrates by vacuum deposition through a porous alumina mask with an ordered array of openings. By using an etchant with a high acid concentration and lo...

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Detalles Bibliográficos
Autores principales: Asoh, Hidetaka, Imai, Ryota, Hashimoto, Hideki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5498430/
https://www.ncbi.nlm.nih.gov/pubmed/28683539
http://dx.doi.org/10.1186/s11671-017-2219-1
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author Asoh, Hidetaka
Imai, Ryota
Hashimoto, Hideki
author_facet Asoh, Hidetaka
Imai, Ryota
Hashimoto, Hideki
author_sort Asoh, Hidetaka
collection PubMed
description GaAs nanopillar arrays were successfully fabricated by metal-assisted chemical etching using Au nanodot arrays. The nanodot arrays were formed on substrates by vacuum deposition through a porous alumina mask with an ordered array of openings. By using an etchant with a high acid concentration and low oxidant concentration at a relatively low temperature, the area surrounding the Au/GaAs interface could be etched selectively. Under the optimum conditions, Au-capped GaAs nanopillar arrays were formed with an ordered periodicity of 100 nm and pillar heights of 50 nm.
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spelling pubmed-54984302017-07-20 Au-Capped GaAs Nanopillar Arrays Fabricated by Metal-Assisted Chemical Etching Asoh, Hidetaka Imai, Ryota Hashimoto, Hideki Nanoscale Res Lett Nano Express GaAs nanopillar arrays were successfully fabricated by metal-assisted chemical etching using Au nanodot arrays. The nanodot arrays were formed on substrates by vacuum deposition through a porous alumina mask with an ordered array of openings. By using an etchant with a high acid concentration and low oxidant concentration at a relatively low temperature, the area surrounding the Au/GaAs interface could be etched selectively. Under the optimum conditions, Au-capped GaAs nanopillar arrays were formed with an ordered periodicity of 100 nm and pillar heights of 50 nm. Springer US 2017-07-05 /pmc/articles/PMC5498430/ /pubmed/28683539 http://dx.doi.org/10.1186/s11671-017-2219-1 Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Asoh, Hidetaka
Imai, Ryota
Hashimoto, Hideki
Au-Capped GaAs Nanopillar Arrays Fabricated by Metal-Assisted Chemical Etching
title Au-Capped GaAs Nanopillar Arrays Fabricated by Metal-Assisted Chemical Etching
title_full Au-Capped GaAs Nanopillar Arrays Fabricated by Metal-Assisted Chemical Etching
title_fullStr Au-Capped GaAs Nanopillar Arrays Fabricated by Metal-Assisted Chemical Etching
title_full_unstemmed Au-Capped GaAs Nanopillar Arrays Fabricated by Metal-Assisted Chemical Etching
title_short Au-Capped GaAs Nanopillar Arrays Fabricated by Metal-Assisted Chemical Etching
title_sort au-capped gaas nanopillar arrays fabricated by metal-assisted chemical etching
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5498430/
https://www.ncbi.nlm.nih.gov/pubmed/28683539
http://dx.doi.org/10.1186/s11671-017-2219-1
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