Cargando…
Topological delocalization and tuning of surface channel separation in Bi(2)Se(2)Te Topological Insulator Thin films
The surface states of a 3D topological insulator (TI) exhibit topological protection against backscattering. However, the contribution of bulk electrons to the transport data is an impediment to the topological protection of surface states. We report the tuning of the chemical potential in the bulk...
Autores principales: | Gopal, Radha Krishna, Singh, Sourabh, Mandal, Arpita, Sarkar, Jit, Mitra, Chiranjib |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5501793/ https://www.ncbi.nlm.nih.gov/pubmed/28687773 http://dx.doi.org/10.1038/s41598-017-04458-2 |
Ejemplares similares
-
Fermi level tuning of Ag-doped Bi(2)Se(3) topological insulator
por: Uesugi, Eri, et al.
Publicado: (2019) -
Influence of Doping on the Topological Surface States of Crystalline Bi(2)Se(3) Topological Insulators
por: Nowak, Kamil, et al.
Publicado: (2022) -
Evaluation of mobility in thin Bi(2)Se(3) Topological Insulator for prospects of Local Electrical Interconnects
por: Gupta, Gaurav, et al.
Publicado: (2014) -
Quantum frequency doubling in the topological insulator Bi(2)Se(3)
por: He, Pan, et al.
Publicado: (2021) -
Signature of weak-antilocalization in sputtered topological insulator Bi(2)Se(3) thin films with varying thickness
por: Gautam, Sudhanshu, et al.
Publicado: (2022)