Enhanced Unipolar Resistive Switching Characteristics of Hf(0.5)Zr(0.5)O(2) Thin Films with High ON/OFF Ratio

A metal–insulator–metal structure resistive switching device based on H(0.5)Z(0.5)O(2) (HZO) thin film deposited by pulse laser deposition (PLD) has been investigated for resistive random access memory (RRAM) applications. The devices demonstrated bistable and reproducible unipolar resistive switchi...

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Detalles Bibliográficos
Autores principales: Wu, Zhipeng, Zhu, Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5503322/
https://www.ncbi.nlm.nih.gov/pubmed/28772685
http://dx.doi.org/10.3390/ma10030322

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5503322/
https://www.ncbi.nlm.nih.gov/pubmed/28772685
http://dx.doi.org/10.3390/ma10030322

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