Enhancement of carrier transport characteristic in the Sb(2)Se(2)Te topological insulators by N(2) adsorption

The carrier transport characteristics of Sb(2)Se(2)Te topological insulators were investigated, after exposure to different levels of nitrogen gas. The magnetoresistance (MR) slope for the Sb(2)Se(2)Te crystal increased by approximately 100% at 10 K after 2-days of exposure. The Shubnikov-de Haas (S...

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Detalles Bibliográficos
Autores principales: Huang, Shiu-Ming, Huang, Shih-Jhe, Hsu, Ching, Wadekar, Paritosh V., Yan, You-Jhih, Yu, Shih-Hsun, Chou, Mitch
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5506069/
https://www.ncbi.nlm.nih.gov/pubmed/28698640
http://dx.doi.org/10.1038/s41598-017-05369-y
Descripción
Sumario:The carrier transport characteristics of Sb(2)Se(2)Te topological insulators were investigated, after exposure to different levels of nitrogen gas. The magnetoresistance (MR) slope for the Sb(2)Se(2)Te crystal increased by approximately 100% at 10 K after 2-days of exposure. The Shubnikov-de Haas (SdH) oscillation amplitude increased by 30% while oscillation frequencies remained the same. MR slopes and the mobilities had the same dependency on temperature over a wide temperature range. All measured data conformed to a linear correlation between MR slope and mobility, supporting our hypothesis that the MR increase and the SdH oscillation enhancement might be caused by mobility enhancement induced by adsorbed N(2) molecular.

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