Enhancement of carrier transport characteristic in the Sb(2)Se(2)Te topological insulators by N(2) adsorption

The carrier transport characteristics of Sb(2)Se(2)Te topological insulators were investigated, after exposure to different levels of nitrogen gas. The magnetoresistance (MR) slope for the Sb(2)Se(2)Te crystal increased by approximately 100% at 10 K after 2-days of exposure. The Shubnikov-de Haas (S...

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Autores principales: Huang, Shiu-Ming, Huang, Shih-Jhe, Hsu, Ching, Wadekar, Paritosh V., Yan, You-Jhih, Yu, Shih-Hsun, Chou, Mitch
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5506069/
https://www.ncbi.nlm.nih.gov/pubmed/28698640
http://dx.doi.org/10.1038/s41598-017-05369-y
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author Huang, Shiu-Ming
Huang, Shih-Jhe
Hsu, Ching
Wadekar, Paritosh V.
Yan, You-Jhih
Yu, Shih-Hsun
Chou, Mitch
author_facet Huang, Shiu-Ming
Huang, Shih-Jhe
Hsu, Ching
Wadekar, Paritosh V.
Yan, You-Jhih
Yu, Shih-Hsun
Chou, Mitch
author_sort Huang, Shiu-Ming
collection PubMed
description The carrier transport characteristics of Sb(2)Se(2)Te topological insulators were investigated, after exposure to different levels of nitrogen gas. The magnetoresistance (MR) slope for the Sb(2)Se(2)Te crystal increased by approximately 100% at 10 K after 2-days of exposure. The Shubnikov-de Haas (SdH) oscillation amplitude increased by 30% while oscillation frequencies remained the same. MR slopes and the mobilities had the same dependency on temperature over a wide temperature range. All measured data conformed to a linear correlation between MR slope and mobility, supporting our hypothesis that the MR increase and the SdH oscillation enhancement might be caused by mobility enhancement induced by adsorbed N(2) molecular.
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spelling pubmed-55060692017-07-13 Enhancement of carrier transport characteristic in the Sb(2)Se(2)Te topological insulators by N(2) adsorption Huang, Shiu-Ming Huang, Shih-Jhe Hsu, Ching Wadekar, Paritosh V. Yan, You-Jhih Yu, Shih-Hsun Chou, Mitch Sci Rep Article The carrier transport characteristics of Sb(2)Se(2)Te topological insulators were investigated, after exposure to different levels of nitrogen gas. The magnetoresistance (MR) slope for the Sb(2)Se(2)Te crystal increased by approximately 100% at 10 K after 2-days of exposure. The Shubnikov-de Haas (SdH) oscillation amplitude increased by 30% while oscillation frequencies remained the same. MR slopes and the mobilities had the same dependency on temperature over a wide temperature range. All measured data conformed to a linear correlation between MR slope and mobility, supporting our hypothesis that the MR increase and the SdH oscillation enhancement might be caused by mobility enhancement induced by adsorbed N(2) molecular. Nature Publishing Group UK 2017-07-11 /pmc/articles/PMC5506069/ /pubmed/28698640 http://dx.doi.org/10.1038/s41598-017-05369-y Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Huang, Shiu-Ming
Huang, Shih-Jhe
Hsu, Ching
Wadekar, Paritosh V.
Yan, You-Jhih
Yu, Shih-Hsun
Chou, Mitch
Enhancement of carrier transport characteristic in the Sb(2)Se(2)Te topological insulators by N(2) adsorption
title Enhancement of carrier transport characteristic in the Sb(2)Se(2)Te topological insulators by N(2) adsorption
title_full Enhancement of carrier transport characteristic in the Sb(2)Se(2)Te topological insulators by N(2) adsorption
title_fullStr Enhancement of carrier transport characteristic in the Sb(2)Se(2)Te topological insulators by N(2) adsorption
title_full_unstemmed Enhancement of carrier transport characteristic in the Sb(2)Se(2)Te topological insulators by N(2) adsorption
title_short Enhancement of carrier transport characteristic in the Sb(2)Se(2)Te topological insulators by N(2) adsorption
title_sort enhancement of carrier transport characteristic in the sb(2)se(2)te topological insulators by n(2) adsorption
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5506069/
https://www.ncbi.nlm.nih.gov/pubmed/28698640
http://dx.doi.org/10.1038/s41598-017-05369-y
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