Cargando…
Codoping and Interstitial Deactivation in the Control of Amphoteric Li Dopant in ZnO for the Realization of p-Type TCOs
We report on first principle investigations about the electrical character of Li-X codoped ZnO transparent conductive oxides (TCOs). We studied a set of possible X codopants including either unintentional dopants typically present in the system (e.g., H, O) or monovalent acceptor groups, based on ni...
Autores principales: | Catellani, Alessandra, Calzolari, Arrigo |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5506896/ https://www.ncbi.nlm.nih.gov/pubmed/28772691 http://dx.doi.org/10.3390/ma10040332 |
Ejemplares similares
-
S-induced modifications of the optoelectronic properties of ZnO mesoporous nanobelts
por: Fabbri, Filippo, et al.
Publicado: (2016) -
Direct evidence of Be as an amphoteric dopant in GaN
por: Wahl, U., et al.
Publicado: (2022) -
Lattice sites of Na dopants in ZnO
por: Wahl, Ulrich, et al.
Publicado: (2016) -
The electronic structure of amphoteric Sn dopants in III-V compound semiconductors
por: Weyer, G, et al.
Publicado: (1983) -
Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials
por: Li, Xiaoli, et al.
Publicado: (2016)