Cargando…
Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology
Monolithic phosphor-free two-color gallium nitride (GaN)-based white light emitting diodes (LED) have the potential to replace current phosphor-based GaN white LEDs due to their low cost and long life cycle. Unfortunately, the growth of high indium content indium gallium nitride (InGaN)/GaN quantum...
Autores principales: | Li, Ying-Chang, Chang, Liann-Be, Chen, Hou-Jen, Yen, Chia-Yi, Pan, Ke-Wei, Huang, Bohr-Ran, Kuo, Wen-Yu, Chow, Lee, Zhou, Dan, Popko, Ewa |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5506905/ https://www.ncbi.nlm.nih.gov/pubmed/28772792 http://dx.doi.org/10.3390/ma10040432 |
Ejemplares similares
-
Comprehensive Investigation of Electrical and Optical Characteristics of InGaN-Based Flip-Chip Micro-Light-Emitting Diodes
por: Lee, Chang-Cheng, et al.
Publicado: (2022) -
Demonstration of Efficient Ultrathin Side-Emitting InGaN/GaN Flip-Chip Light-Emitting Diodes by Double Side Reflectors
por: Kim, Tae Kyoung, et al.
Publicado: (2022) -
Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
por: Neplokh, Vladimir, et al.
Publicado: (2015) -
Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
por: Li, Hongjian, et al.
Publicado: (2016) -
Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
por: Robin, Y., et al.
Publicado: (2018)