Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate

The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane)....

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Autores principales: Wu, YewChung Sermon, Isabel, A. Panimaya Selvi, Zheng, Jian-Hsuan, Lin, Bo-Wen, Li, Jhen-Hong, Lin, Chia-Chen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5507034/
https://www.ncbi.nlm.nih.gov/pubmed/28788044
http://dx.doi.org/10.3390/ma8041993
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author Wu, YewChung Sermon
Isabel, A. Panimaya Selvi
Zheng, Jian-Hsuan
Lin, Bo-Wen
Li, Jhen-Hong
Lin, Chia-Chen
author_facet Wu, YewChung Sermon
Isabel, A. Panimaya Selvi
Zheng, Jian-Hsuan
Lin, Bo-Wen
Li, Jhen-Hong
Lin, Chia-Chen
author_sort Wu, YewChung Sermon
collection PubMed
description The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency.
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spelling pubmed-55070342017-07-28 Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate Wu, YewChung Sermon Isabel, A. Panimaya Selvi Zheng, Jian-Hsuan Lin, Bo-Wen Li, Jhen-Hong Lin, Chia-Chen Materials (Basel) Article The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency. MDPI 2015-04-22 /pmc/articles/PMC5507034/ /pubmed/28788044 http://dx.doi.org/10.3390/ma8041993 Text en © 2015 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wu, YewChung Sermon
Isabel, A. Panimaya Selvi
Zheng, Jian-Hsuan
Lin, Bo-Wen
Li, Jhen-Hong
Lin, Chia-Chen
Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate
title Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate
title_full Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate
title_fullStr Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate
title_full_unstemmed Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate
title_short Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate
title_sort crystal quality and light output power of gan-based leds grown on concave patterned sapphire substrate
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5507034/
https://www.ncbi.nlm.nih.gov/pubmed/28788044
http://dx.doi.org/10.3390/ma8041993
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