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Application of phase-change materials in memory taxonomy
Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional o...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Taylor & Francis
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5507150/ https://www.ncbi.nlm.nih.gov/pubmed/28740557 http://dx.doi.org/10.1080/14686996.2017.1332455 |
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author | Wang, Lei Tu, Liang Wen, Jing |
author_facet | Wang, Lei Tu, Liang Wen, Jing |
author_sort | Wang, Lei |
collection | PubMed |
description | Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional optical discs to emerging nanophotonic devices. Current research efforts are mostly devoted to phase-change random access memory, whereas the applications of phase-change materials in other types of memory devices are rarely reported. Here we review the physical principles of phase-change materials and devices aiming to help researchers understand the concept of phase-change memory. We classify phase-change memory devices into phase-change optical disc, phase-change scanning probe memory, phase-change random access memory, and phase-change nanophotonic device, according to their locations in memory hierarchy. For each device type we discuss the physical principles in conjunction with merits and weakness for data storage applications. We also outline state-of-the-art technologies and future prospects. |
format | Online Article Text |
id | pubmed-5507150 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Taylor & Francis |
record_format | MEDLINE/PubMed |
spelling | pubmed-55071502017-07-24 Application of phase-change materials in memory taxonomy Wang, Lei Tu, Liang Wen, Jing Sci Technol Adv Mater Optical, Magnetic and Electronic Device Materials Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional optical discs to emerging nanophotonic devices. Current research efforts are mostly devoted to phase-change random access memory, whereas the applications of phase-change materials in other types of memory devices are rarely reported. Here we review the physical principles of phase-change materials and devices aiming to help researchers understand the concept of phase-change memory. We classify phase-change memory devices into phase-change optical disc, phase-change scanning probe memory, phase-change random access memory, and phase-change nanophotonic device, according to their locations in memory hierarchy. For each device type we discuss the physical principles in conjunction with merits and weakness for data storage applications. We also outline state-of-the-art technologies and future prospects. Taylor & Francis 2017-06-13 /pmc/articles/PMC5507150/ /pubmed/28740557 http://dx.doi.org/10.1080/14686996.2017.1332455 Text en © 2017 The Author(s). Published by National Institute for Materials Science in partnership with Taylor & Francis http://creativecommons.org/licenses/by/4.0/ This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Optical, Magnetic and Electronic Device Materials Wang, Lei Tu, Liang Wen, Jing Application of phase-change materials in memory taxonomy |
title | Application of phase-change materials in memory taxonomy |
title_full | Application of phase-change materials in memory taxonomy |
title_fullStr | Application of phase-change materials in memory taxonomy |
title_full_unstemmed | Application of phase-change materials in memory taxonomy |
title_short | Application of phase-change materials in memory taxonomy |
title_sort | application of phase-change materials in memory taxonomy |
topic | Optical, Magnetic and Electronic Device Materials |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5507150/ https://www.ncbi.nlm.nih.gov/pubmed/28740557 http://dx.doi.org/10.1080/14686996.2017.1332455 |
work_keys_str_mv | AT wanglei applicationofphasechangematerialsinmemorytaxonomy AT tuliang applicationofphasechangematerialsinmemorytaxonomy AT wenjing applicationofphasechangematerialsinmemorytaxonomy |