Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT shows a high mobility of 39.4 cm [Formula: see text] ·V [Formula: see text] ·s [Formula: see text] a turn-on voltage of −0.8 V...

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Detalles Bibliográficos
Autores principales: Hu, Shiben, Fang, Zhiqiang, Ning, Honglong, Tao, Ruiqiang, Liu, Xianzhe, Zeng, Yong, Yao, Rihui, Huang, Fuxiang, Li, Zhengcao, Xu, Miao, Wang, Lei, Lan, Linfeng, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5509041/
https://www.ncbi.nlm.nih.gov/pubmed/28773743
http://dx.doi.org/10.3390/ma9080623
Descripción
Sumario:We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT shows a high mobility of 39.4 cm [Formula: see text] ·V [Formula: see text] ·s [Formula: see text] a turn-on voltage of −0.8 V and a low subthreshold swing of 0.47 V/decade. Cu diffusion is suppressed because pre-annealing can protect a-IGZO from damage during the electrode sputtering and reduce the copper diffusion paths by making film denser. Due to the interaction of Cr with a-IGZO, the carrier concentration of a-IGZO, which is responsible for high mobility, rises.

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