Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT shows a high mobility of 39.4 cm [Formula: see text] ·V [Formula: see text] ·s [Formula: see text] a turn-on voltage of −0.8 V...

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Detalles Bibliográficos
Autores principales: Hu, Shiben, Fang, Zhiqiang, Ning, Honglong, Tao, Ruiqiang, Liu, Xianzhe, Zeng, Yong, Yao, Rihui, Huang, Fuxiang, Li, Zhengcao, Xu, Miao, Wang, Lei, Lan, Linfeng, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5509041/
https://www.ncbi.nlm.nih.gov/pubmed/28773743
http://dx.doi.org/10.3390/ma9080623
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author Hu, Shiben
Fang, Zhiqiang
Ning, Honglong
Tao, Ruiqiang
Liu, Xianzhe
Zeng, Yong
Yao, Rihui
Huang, Fuxiang
Li, Zhengcao
Xu, Miao
Wang, Lei
Lan, Linfeng
Peng, Junbiao
author_facet Hu, Shiben
Fang, Zhiqiang
Ning, Honglong
Tao, Ruiqiang
Liu, Xianzhe
Zeng, Yong
Yao, Rihui
Huang, Fuxiang
Li, Zhengcao
Xu, Miao
Wang, Lei
Lan, Linfeng
Peng, Junbiao
author_sort Hu, Shiben
collection PubMed
description We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT shows a high mobility of 39.4 cm [Formula: see text] ·V [Formula: see text] ·s [Formula: see text] a turn-on voltage of −0.8 V and a low subthreshold swing of 0.47 V/decade. Cu diffusion is suppressed because pre-annealing can protect a-IGZO from damage during the electrode sputtering and reduce the copper diffusion paths by making film denser. Due to the interaction of Cr with a-IGZO, the carrier concentration of a-IGZO, which is responsible for high mobility, rises.
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spelling pubmed-55090412017-07-28 Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs Hu, Shiben Fang, Zhiqiang Ning, Honglong Tao, Ruiqiang Liu, Xianzhe Zeng, Yong Yao, Rihui Huang, Fuxiang Li, Zhengcao Xu, Miao Wang, Lei Lan, Linfeng Peng, Junbiao Materials (Basel) Article We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT shows a high mobility of 39.4 cm [Formula: see text] ·V [Formula: see text] ·s [Formula: see text] a turn-on voltage of −0.8 V and a low subthreshold swing of 0.47 V/decade. Cu diffusion is suppressed because pre-annealing can protect a-IGZO from damage during the electrode sputtering and reduce the copper diffusion paths by making film denser. Due to the interaction of Cr with a-IGZO, the carrier concentration of a-IGZO, which is responsible for high mobility, rises. MDPI 2016-07-27 /pmc/articles/PMC5509041/ /pubmed/28773743 http://dx.doi.org/10.3390/ma9080623 Text en © 2016 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Hu, Shiben
Fang, Zhiqiang
Ning, Honglong
Tao, Ruiqiang
Liu, Xianzhe
Zeng, Yong
Yao, Rihui
Huang, Fuxiang
Li, Zhengcao
Xu, Miao
Wang, Lei
Lan, Linfeng
Peng, Junbiao
Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs
title Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs
title_full Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs
title_fullStr Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs
title_full_unstemmed Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs
title_short Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs
title_sort effect of post treatment for cu-cr source/drain electrodes on a-igzo tfts
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5509041/
https://www.ncbi.nlm.nih.gov/pubmed/28773743
http://dx.doi.org/10.3390/ma9080623
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