Fluorinated h-BN as a magnetic semiconductor

We report the fluorination of electrically insulating hexagonal boron nitride (h-BN) and the subsequent modification of its electronic band structure to a wide bandgap semiconductor via introduction of defect levels. The electrophilic nature of fluorine causes changes in the charge distribution arou...

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Detalles Bibliográficos
Autores principales: Radhakrishnan, Sruthi, Das, Deya, Samanta, Atanu, de los Reyes, Carlos A., Deng, Liangzi, Alemany, Lawrence B., Weldeghiorghis, Thomas K., Khabashesku, Valery N., Kochat, Vidya, Jin, Zehua, Sudeep, Parambath M., Martí, Angel A., Chu, Ching-Wu, Roy, Ajit, Tiwary, Chandra Sekhar, Singh, Abhishek K., Ajayan, Pulickel M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2017
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5510960/
https://www.ncbi.nlm.nih.gov/pubmed/28740867
http://dx.doi.org/10.1126/sciadv.1700842

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