Electric field control of magnetization direction across the antiferromagnetic to ferromagnetic transition

Electric-field-induced magnetic switching can lead to a new paradigm of ultra-low power nonvolatile magnetoelectric random access memory (MeRAM). To date the realization of MeRAM relies primarily on ferromagnetic (FM) based heterostructures which exhibit low voltage-controlled magnetic anisotropy (V...

Descripción completa

Detalles Bibliográficos
Autores principales: Zheng, Guohui, Ke, San-Huang, Miao, Maosheng, Kim, Jinwoong, Ramesh, R., Kioussis, Nicholas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5511149/
https://www.ncbi.nlm.nih.gov/pubmed/28710375
http://dx.doi.org/10.1038/s41598-017-05611-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5511149/
https://www.ncbi.nlm.nih.gov/pubmed/28710375
http://dx.doi.org/10.1038/s41598-017-05611-7

Ejemplares similares