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Electric field control of magnetization direction across the antiferromagnetic to ferromagnetic transition

Electric-field-induced magnetic switching can lead to a new paradigm of ultra-low power nonvolatile magnetoelectric random access memory (MeRAM). To date the realization of MeRAM relies primarily on ferromagnetic (FM) based heterostructures which exhibit low voltage-controlled magnetic anisotropy (V...

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Detalles Bibliográficos
Autores principales:	Zheng, Guohui, Ke, San-Huang, Miao, Maosheng, Kim, Jinwoong, Ramesh, R., Kioussis, Nicholas
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5511149/ https://www.ncbi.nlm.nih.gov/pubmed/28710375 http://dx.doi.org/10.1038/s41598-017-05611-7

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