Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition

The Si(0001) face and C(000-1) face dependences on growth pressure of epitaxial graphene (EG) grown on 4H-SiC substrates by ethene chemical vapor deposition (CVD) was studied using atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman). AFM revealed that EGs on Si-faced substrates had...

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Detalles Bibliográficos
Autores principales: Cai, Shuxian, Liu, Zhonghua, Zhong, Ni, Liu, Shengbei, Liu, Xingfang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5512615/
https://www.ncbi.nlm.nih.gov/pubmed/28793524
http://dx.doi.org/10.3390/ma8095263

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5512615/
https://www.ncbi.nlm.nih.gov/pubmed/28793524
http://dx.doi.org/10.3390/ma8095263

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