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Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station
InGaSb ternary alloys were grown from GaSb (111)A and B faces (Ga and Sb faces) under microgravity conditions on board the International Space Station by a vertical gradient freezing method. The dissolution process of the Ga and Sb faces of GaSb and orientation-dependent growth properties of InGaSb...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5515529/ https://www.ncbi.nlm.nih.gov/pubmed/28725736 http://dx.doi.org/10.1038/npjmgrav.2016.26 |
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author | Nirmal Kumar, Velu Arivanandhan, Mukannan Rajesh, Govindasamy Koyama, Tadanobu Momose, Yoshimi Sakata, Kaoruho Ozawa, Tetsuo Okano, Yasunori Inatomi, Yuko Hayakawa, Yasuhiro |
author_facet | Nirmal Kumar, Velu Arivanandhan, Mukannan Rajesh, Govindasamy Koyama, Tadanobu Momose, Yoshimi Sakata, Kaoruho Ozawa, Tetsuo Okano, Yasunori Inatomi, Yuko Hayakawa, Yasuhiro |
author_sort | Nirmal Kumar, Velu |
collection | PubMed |
description | InGaSb ternary alloys were grown from GaSb (111)A and B faces (Ga and Sb faces) under microgravity conditions on board the International Space Station by a vertical gradient freezing method. The dissolution process of the Ga and Sb faces of GaSb and orientation-dependent growth properties of InGaSb were analysed. The dissolution of GaSb(111)B was greater than that of (111)A, which was found from the remaining undissolved seed and feed crystals. The higher dissolution of the Sb face was explained based on the number of atoms at that face, and its bonding with the next atomic layer. The growth interface shape was almost flat in both cases. The indium composition in both InGaSb samples was uniform in the radial direction and it gradually decreased along the growth direction because of segregation. The growth rate of InGaSb from GaSb (111)B was found to be higher than that of GaSb (111)A because of the higher dissolution of GaSb (111)B. |
format | Online Article Text |
id | pubmed-5515529 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-55155292017-07-19 Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station Nirmal Kumar, Velu Arivanandhan, Mukannan Rajesh, Govindasamy Koyama, Tadanobu Momose, Yoshimi Sakata, Kaoruho Ozawa, Tetsuo Okano, Yasunori Inatomi, Yuko Hayakawa, Yasuhiro NPJ Microgravity Article InGaSb ternary alloys were grown from GaSb (111)A and B faces (Ga and Sb faces) under microgravity conditions on board the International Space Station by a vertical gradient freezing method. The dissolution process of the Ga and Sb faces of GaSb and orientation-dependent growth properties of InGaSb were analysed. The dissolution of GaSb(111)B was greater than that of (111)A, which was found from the remaining undissolved seed and feed crystals. The higher dissolution of the Sb face was explained based on the number of atoms at that face, and its bonding with the next atomic layer. The growth interface shape was almost flat in both cases. The indium composition in both InGaSb samples was uniform in the radial direction and it gradually decreased along the growth direction because of segregation. The growth rate of InGaSb from GaSb (111)B was found to be higher than that of GaSb (111)A because of the higher dissolution of GaSb (111)B. Nature Publishing Group 2016-07-21 /pmc/articles/PMC5515529/ /pubmed/28725736 http://dx.doi.org/10.1038/npjmgrav.2016.26 Text en Copyright © 2016 Published in cooperation with the Biodesign Institute at Arizona State University, with the support of NASA http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Nirmal Kumar, Velu Arivanandhan, Mukannan Rajesh, Govindasamy Koyama, Tadanobu Momose, Yoshimi Sakata, Kaoruho Ozawa, Tetsuo Okano, Yasunori Inatomi, Yuko Hayakawa, Yasuhiro Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station |
title | Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station |
title_full | Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station |
title_fullStr | Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station |
title_full_unstemmed | Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station |
title_short | Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station |
title_sort | investigation of directionally solidified ingasb ternary alloys from ga and sb faces of gasb(111) under prolonged microgravity at the international space station |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5515529/ https://www.ncbi.nlm.nih.gov/pubmed/28725736 http://dx.doi.org/10.1038/npjmgrav.2016.26 |
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