Cargando…
Efficient two-step photocarrier generation in bias-controlled InAs/GaAs quantum dot superlattice intermediate-band solar cells
We studied the effects of the internal electric field on two-step photocarrier generation in InAs/GaAs quantum dot superlattice (QDSL) intermediate-band solar cells (IBSCs). The external quantum efficiency of QDSL-IBSCs was measured as a function of the internal electric field intensity, and compare...
Autores principales: | Kada, T., Asahi, S., Kaizu, T., Harada, Y., Tamaki, R., Okada, Y., Kita, T. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5517490/ https://www.ncbi.nlm.nih.gov/pubmed/28724895 http://dx.doi.org/10.1038/s41598-017-05494-8 |
Ejemplares similares
-
Phonon Transport
in GaAs and InAs Twinning Superlattices
por: López-Güell, Kim, et al.
Publicado: (2022) -
Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice
por: Sobolev, Mikhail, et al.
Publicado: (2012) -
Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces
por: Milekhin, Alexander, et al.
Publicado: (2012) -
Infrared photodetector sensitized by InAs quantum dots embedded near an Al(0.3)Ga(0.7)As/GaAs heterointerface
por: Murata, Takahiko, et al.
Publicado: (2020) -
Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
por: Golovynskyi, Sergii, et al.
Publicado: (2017)