Carrier dynamics of Mn-induced states in GaN thin films

GaN-based materials are widely used for light emission devices, but the intrinsic property of wide bandgap makes it improper for photovoltaic applications. Recently, manganese was doped into GaN for absorption of visible light, and the conversion efficiency of GaN-based solar cells has been greatly...

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Autores principales: Chen, Yu-Ting, Yang, Chi-Yuan, Chen, Po-Cheng, Sheu, Jinn-Kong, Lin, Kung-Hsuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5517569/
https://www.ncbi.nlm.nih.gov/pubmed/28724899
http://dx.doi.org/10.1038/s41598-017-06316-7
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author Chen, Yu-Ting
Yang, Chi-Yuan
Chen, Po-Cheng
Sheu, Jinn-Kong
Lin, Kung-Hsuan
author_facet Chen, Yu-Ting
Yang, Chi-Yuan
Chen, Po-Cheng
Sheu, Jinn-Kong
Lin, Kung-Hsuan
author_sort Chen, Yu-Ting
collection PubMed
description GaN-based materials are widely used for light emission devices, but the intrinsic property of wide bandgap makes it improper for photovoltaic applications. Recently, manganese was doped into GaN for absorption of visible light, and the conversion efficiency of GaN-based solar cells has been greatly improved. We conducted transient optical measurements to study the carrier dynamics of Mn-doped GaN. The lifetime of carriers in the Mn-related intermediate bands (at 1.5 eV above the valence band edge) is around 1.7 ns. The carrier relaxation within the Mn-induced bandtail states was on the order of a few hundred picoseconds. The relaxation times of different states are important parameters for optimization of conversion efficiency for intermediate-band solar cells.
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spelling pubmed-55175692017-07-20 Carrier dynamics of Mn-induced states in GaN thin films Chen, Yu-Ting Yang, Chi-Yuan Chen, Po-Cheng Sheu, Jinn-Kong Lin, Kung-Hsuan Sci Rep Article GaN-based materials are widely used for light emission devices, but the intrinsic property of wide bandgap makes it improper for photovoltaic applications. Recently, manganese was doped into GaN for absorption of visible light, and the conversion efficiency of GaN-based solar cells has been greatly improved. We conducted transient optical measurements to study the carrier dynamics of Mn-doped GaN. The lifetime of carriers in the Mn-related intermediate bands (at 1.5 eV above the valence band edge) is around 1.7 ns. The carrier relaxation within the Mn-induced bandtail states was on the order of a few hundred picoseconds. The relaxation times of different states are important parameters for optimization of conversion efficiency for intermediate-band solar cells. Nature Publishing Group UK 2017-07-19 /pmc/articles/PMC5517569/ /pubmed/28724899 http://dx.doi.org/10.1038/s41598-017-06316-7 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Chen, Yu-Ting
Yang, Chi-Yuan
Chen, Po-Cheng
Sheu, Jinn-Kong
Lin, Kung-Hsuan
Carrier dynamics of Mn-induced states in GaN thin films
title Carrier dynamics of Mn-induced states in GaN thin films
title_full Carrier dynamics of Mn-induced states in GaN thin films
title_fullStr Carrier dynamics of Mn-induced states in GaN thin films
title_full_unstemmed Carrier dynamics of Mn-induced states in GaN thin films
title_short Carrier dynamics of Mn-induced states in GaN thin films
title_sort carrier dynamics of mn-induced states in gan thin films
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5517569/
https://www.ncbi.nlm.nih.gov/pubmed/28724899
http://dx.doi.org/10.1038/s41598-017-06316-7
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