Carrier dynamics of Mn-induced states in GaN thin films

GaN-based materials are widely used for light emission devices, but the intrinsic property of wide bandgap makes it improper for photovoltaic applications. Recently, manganese was doped into GaN for absorption of visible light, and the conversion efficiency of GaN-based solar cells has been greatly...

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Detalles Bibliográficos
Autores principales: Chen, Yu-Ting, Yang, Chi-Yuan, Chen, Po-Cheng, Sheu, Jinn-Kong, Lin, Kung-Hsuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5517569/
https://www.ncbi.nlm.nih.gov/pubmed/28724899
http://dx.doi.org/10.1038/s41598-017-06316-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5517569/
https://www.ncbi.nlm.nih.gov/pubmed/28724899
http://dx.doi.org/10.1038/s41598-017-06316-7

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