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Optical properties and impedance spectroscopy analyses for microscale Si pillar solar cells

In this data article, optical properties and impedance spectroscopy analyses were applied for the 5 μm-height pillar Si solar cells to analyzed the insight of the Si geometric effect (Yadav et al., 2017) [1]. The surface reflectance data measured for all Si pillar samples (Fixed height of 5 μm with...

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Detalles Bibliográficos
Autores principales: Patel, Malkeshkumar, Kim, Joondong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5522911/
https://www.ncbi.nlm.nih.gov/pubmed/28761910
http://dx.doi.org/10.1016/j.dib.2017.07.016
Descripción
Sumario:In this data article, optical properties and impedance spectroscopy analyses were applied for the 5 μm-height pillar Si solar cells to analyzed the insight of the Si geometric effect (Yadav et al., 2017) [1]. The surface reflectance data measured for all Si pillar samples (Fixed height of 5 μm with varying width and period. Geometric features of Si pillars are summarized in Table 1) are presented. Statistical data after analysis are summarized in the table, to profile the integrated reflectance quantitatively. Impedance spectroscopy analyses of all the samples were performed to demonstrate the bias-dependent space charge region. Mott–Schottky investigation shows the enhancement of built-in potential values due to the pillar structures.