Electrical circuit model of ITO/AZO/Ge photodetector

In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a...

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Detalles Bibliográficos
Autores principales: Patel, Malkeshkumar, Kim, Joondong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2017
Materias:
Energy
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5526516/
https://www.ncbi.nlm.nih.gov/pubmed/28765832
http://dx.doi.org/10.1016/j.dib.2017.07.031
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author Patel, Malkeshkumar
Kim, Joondong
author_facet Patel, Malkeshkumar
Kim, Joondong
author_sort Patel, Malkeshkumar
collection PubMed
description In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R–C circuit model using the impedance spectroscopy.
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spelling pubmed-55265162017-08-01 Electrical circuit model of ITO/AZO/Ge photodetector Patel, Malkeshkumar Kim, Joondong Data Brief Energy In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R–C circuit model using the impedance spectroscopy. Elsevier 2017-07-14 /pmc/articles/PMC5526516/ /pubmed/28765832 http://dx.doi.org/10.1016/j.dib.2017.07.031 Text en © 2017 The Authors http://creativecommons.org/licenses/by/4.0/ This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Energy
Patel, Malkeshkumar
Kim, Joondong
Electrical circuit model of ITO/AZO/Ge photodetector
title Electrical circuit model of ITO/AZO/Ge photodetector
title_full Electrical circuit model of ITO/AZO/Ge photodetector
title_fullStr Electrical circuit model of ITO/AZO/Ge photodetector
title_full_unstemmed Electrical circuit model of ITO/AZO/Ge photodetector
title_short Electrical circuit model of ITO/AZO/Ge photodetector
title_sort electrical circuit model of ito/azo/ge photodetector
topic Energy
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5526516/
https://www.ncbi.nlm.nih.gov/pubmed/28765832
http://dx.doi.org/10.1016/j.dib.2017.07.031
work_keys_str_mv AT patelmalkeshkumar electricalcircuitmodelofitoazogephotodetector
AT kimjoondong electricalcircuitmodelofitoazogephotodetector

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