Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepare...

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Detalles Bibliográficos
Autores principales: Su, Xi, Zhang, Guozhen, Wang, Xiao, Chen, Chao, Wu, Hao, Liu, Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5529301/
https://www.ncbi.nlm.nih.gov/pubmed/28754038
http://dx.doi.org/10.1186/s11671-017-2239-x
Descripción
Sumario:Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10(−2) Ω·cm(2). Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

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