Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepare...

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Autores principales: Su, Xi, Zhang, Guozhen, Wang, Xiao, Chen, Chao, Wu, Hao, Liu, Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5529301/
https://www.ncbi.nlm.nih.gov/pubmed/28754038
http://dx.doi.org/10.1186/s11671-017-2239-x
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author Su, Xi
Zhang, Guozhen
Wang, Xiao
Chen, Chao
Wu, Hao
Liu, Chang
author_facet Su, Xi
Zhang, Guozhen
Wang, Xiao
Chen, Chao
Wu, Hao
Liu, Chang
author_sort Su, Xi
collection PubMed
description Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10(−2) Ω·cm(2). Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.
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spelling pubmed-55293012017-08-10 Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts Su, Xi Zhang, Guozhen Wang, Xiao Chen, Chao Wu, Hao Liu, Chang Nanoscale Res Lett Nano Express Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10(−2) Ω·cm(2). Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics. Springer US 2017-07-26 /pmc/articles/PMC5529301/ /pubmed/28754038 http://dx.doi.org/10.1186/s11671-017-2239-x Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Su, Xi
Zhang, Guozhen
Wang, Xiao
Chen, Chao
Wu, Hao
Liu, Chang
Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts
title Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts
title_full Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts
title_fullStr Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts
title_full_unstemmed Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts
title_short Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts
title_sort two-step deposition of al-doped zno on p-gan to form ohmic contacts
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5529301/
https://www.ncbi.nlm.nih.gov/pubmed/28754038
http://dx.doi.org/10.1186/s11671-017-2239-x
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