I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor

We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as [Formula: see text]. We show that the enhanced photocurrent...

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Detalles Bibliográficos
Autores principales: Luongo, Giuseppe, Giubileo, Filippo, Genovese, Luca, Iemmo, Laura, Martucciello, Nadia, Di Bartolomeo, Antonio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5535224/
https://www.ncbi.nlm.nih.gov/pubmed/28654012
http://dx.doi.org/10.3390/nano7070158
Descripción
Sumario:We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as [Formula: see text]. We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO(2)/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally generated carriers, which contribute to the high leakage current often observed in graphene/Si junctions.

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