I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor

We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as [Formula: see text]. We show that the enhanced photocurrent...

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Detalles Bibliográficos
Autores principales: Luongo, Giuseppe, Giubileo, Filippo, Genovese, Luca, Iemmo, Laura, Martucciello, Nadia, Di Bartolomeo, Antonio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5535224/
https://www.ncbi.nlm.nih.gov/pubmed/28654012
http://dx.doi.org/10.3390/nano7070158
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author Luongo, Giuseppe
Giubileo, Filippo
Genovese, Luca
Iemmo, Laura
Martucciello, Nadia
Di Bartolomeo, Antonio
author_facet Luongo, Giuseppe
Giubileo, Filippo
Genovese, Luca
Iemmo, Laura
Martucciello, Nadia
Di Bartolomeo, Antonio
author_sort Luongo, Giuseppe
collection PubMed
description We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as [Formula: see text]. We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO(2)/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally generated carriers, which contribute to the high leakage current often observed in graphene/Si junctions.
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spelling pubmed-55352242017-08-04 I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor Luongo, Giuseppe Giubileo, Filippo Genovese, Luca Iemmo, Laura Martucciello, Nadia Di Bartolomeo, Antonio Nanomaterials (Basel) Article We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as [Formula: see text]. We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO(2)/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally generated carriers, which contribute to the high leakage current often observed in graphene/Si junctions. MDPI 2017-06-27 /pmc/articles/PMC5535224/ /pubmed/28654012 http://dx.doi.org/10.3390/nano7070158 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Luongo, Giuseppe
Giubileo, Filippo
Genovese, Luca
Iemmo, Laura
Martucciello, Nadia
Di Bartolomeo, Antonio
I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor
title I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor
title_full I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor
title_fullStr I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor
title_full_unstemmed I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor
title_short I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor
title_sort i-v and c-v characterization of a high-responsivity graphene/silicon photodiode with embedded mos capacitor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5535224/
https://www.ncbi.nlm.nih.gov/pubmed/28654012
http://dx.doi.org/10.3390/nano7070158
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