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On the influence of interface charging dynamics and stressing conditions in strained silicon devices
The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results. Results clearly indicate that the electro-optic static response is basically governed by carrier effects...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5543050/ https://www.ncbi.nlm.nih.gov/pubmed/28775297 http://dx.doi.org/10.1038/s41598-017-05067-9 |