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Ising-type Magnetic Anisotropy in CePd(2)As(2)

We investigated the anisotropic magnetic properties of CePd(2)As(2) by magnetic, thermal and electrical transport studies. X-ray diffraction confirmed the tetragonal ThCr(2)Si(2)-type structure and the high-quality of the single crystals. Magnetisation and magnetic susceptibility data taken along th...

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Detalles Bibliográficos
Autores principales: Ajeesh, M. O., Shang, T., Jiang, W. B., Xie, W., dos Reis, R. D., Smidman, M., Geibel, C., Yuan, H. Q., Nicklas, M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5544730/
https://www.ncbi.nlm.nih.gov/pubmed/28779079
http://dx.doi.org/10.1038/s41598-017-07595-w
Descripción
Sumario:We investigated the anisotropic magnetic properties of CePd(2)As(2) by magnetic, thermal and electrical transport studies. X-ray diffraction confirmed the tetragonal ThCr(2)Si(2)-type structure and the high-quality of the single crystals. Magnetisation and magnetic susceptibility data taken along the different crystallographic directions evidence a huge crystalline electric field (CEF) induced Ising-type magneto-crystalline anisotropy with a large c-axis moment and a small in-plane moment at low temperature. A detailed CEF analysis based on the magnetic susceptibility data indicates an almost pure |±5/2〉 CEF ground-state doublet with the dominantly |±3/2〉 and the |±1/2〉 doublets at 290 K and 330 K, respectively. At low temperature, we observe a uniaxial antiferromagnetic (AFM) transition at T (N) = 14.7 K with the crystallographic c-direction being the magnetic easy-axis. The magnetic entropy gain up to T (N) reaches almost R ln 2 indicating localised 4 f-electron magnetism without significant Kondo-type interactions. Below T (N), the application of a magnetic field along the c-axis induces a metamagnetic transition from the AFM to a field-polarised phase at μ (0) H (c0) = 0.95 T, exhibiting a text-book example of a spin-flip transition as anticipated for an Ising-type AFM.